Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium oxide with a novel "gate-all-around" structure. By precisely engineering the material's atomic structure, the new device achieves remarkable electron mobility and stability. This breakthrough could fuel faster, more reliable electronics powering future technologies from AI to big data systems.
from Top Technology News -- ScienceDaily https://ift.tt/q6lSA5Z
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